David

Abstract Copper selenide (CuSe₂) thin films represent a promising class of semiconductor materials with applications spanning photovoltaic devices, electro-optical systems, and thermoelectric converters. This article provides a comprehensive review of the optimization strategies for CuSe₂ thin film deposition, focusing on critical process parameters and their influence on film performance. We examine various deposition techniques including chemical bath deposition, thermal evaporation, … Read more

Abstract Chromium disilicide (CrSi₂) has emerged as a promising contact material for semiconductor devices due to its favorable electrical properties, thermal stability, and compatibility with silicon processing. Achieving low-resistivity contacts through sputtering deposition requires careful optimization of multiple process parameters. This article provides a comprehensive guide to optimizing CrSi₂ sputtering processes, covering target preparation, deposition parameters, post-deposition treatments, and characterization … Read more

Abstract Tantalum-10% tungsten (Ta-10W) alloys represent a critical class of refractory materials that combine the exceptional corrosion resistance of tantalum with the enhanced mechanical properties imparted by tungsten additions. This article comprehensively examines the engineering aspects of Ta-10W tube manufacturing, focusing on microstructure evolution, purity control methodologies, and applications in extreme environments. The alloy’s unique combination of high-temperature strength, corrosion … Read more

Abstract Boron carbide (B₄C) sputtering targets represent a critical component in physical vapor deposition (PVD) processes for producing advanced ceramic coatings with exceptional mechanical, tribological, and thermal properties. This article comprehensively examines the deposition behavior of boron carbide coatings through various PVD techniques, with particular emphasis on magnetron sputtering and pulsed laser deposition. We analyze the challenges associated with stoichiometry … Read more

Abstract Nb-1Zr alloy represents a critical material system for advanced high-temperature applications, particularly in space nuclear power systems, heat pipes, and other demanding environments requiring exceptional strength, creep resistance, and compatibility with liquid alkali metals. This article provides a comprehensive review of the processing methodologies, contamination control strategies, and high-temperature performance characteristics of Nb-1Zr alloy capillaries. The discussion encompasses material … Read more

Abstract Zirconium 702 (Zr702) represents a premier material choice for aggressive chemical process applications due to its exceptional corrosion resistance in highly acidic and alkaline environments. This article comprehensively examines the performance characteristics, fabrication methodologies, and design limitations of Zr702 tubing in corrosive process systems. The analysis covers material properties, corrosion resistance mechanisms, welding and fabrication techniques, and operational constraints … Read more

Abstract Lead arsenide (PbAs) represents an emerging class of semiconductor materials with promising optoelectronic properties for infrared detection and other device applications. This article comprehensively reviews the fabrication of lead arsenide sputtering targets, focusing on stoichiometry control methodologies, thin film growth techniques, and device-relevant performance characteristics. The synthesis of PbAs compounds presents unique challenges due to the reactivity of both … Read more

Niobium-1% zirconium (Nb-1Zr) is a well-established refractory alloy used where conventional stainless steels, nickel alloys, and many ceramics become limiting because of temperature capability, creep resistance, or contamination concerns. In capillary form, the alloy is especially relevant for applications requiring narrow internal passages, dimensional precision, low vapor pressure, and stable performance in vacuum or controlled atmospheres. Typical use cases include … Read more

Aluminum-doped zinc oxide (AZO) sputtering targets have become essential tools in thin film deposition for transparent conductive oxide (TCO) applications. Engineers working on optoelectronic devices, solar cells, flat panel displays, and touch screen technologies rely on AZO targets to deposit films that combine optical transparency with electrical conductivity—a combination critical for modern electronic and photovoltaic systems. The performance of AZO … Read more

Arsenic sulfide (As₂S₃) sputtering targets enable the deposition of high-quality chalcogenide thin films for infrared optics, photonic devices, and phase-change memory research. Engineers working with As₂S₃ films face specific challenges related to stoichiometry control, substrate temperature management, and film uniformity—factors that directly impact optical transmission, refractive index stability, and device performance. This guide covers practical deposition parameters, material properties, and … Read more