Lead Arsenide Sputtering Targets: Stoichiometry Control, Film Growth, and Device-Relevant Performance
Abstract Lead arsenide (PbAs) represents an emerging class of semiconductor materials with promising optoelectronic properties for infrared detection and other device applications. This article comprehensively reviews the fabrication of lead arsenide sputtering targets, focusing on stoichiometry control methodologies, thin film growth techniques, and device-relevant performance characteristics. The synthesis of PbAs compounds presents unique challenges due to the reactivity of both … Read more