HfPrO Sputtering Target: Ferroelectric Hafnia Thin Films for Next-Generation Non-Volatile Memory
The discovery of ferroelectricity in doped hafnium oxide (HfO₂) has revolutionized the field of non-volatile memory technology, offering a CMOS-compatible solution that overcomes the scaling limitations of traditional perovskite-based ferroelectrics. This article explores the development and application of HfPrO (hafnium-praseodymium oxide) sputtering targets for the deposition of ferroelectric thin films. We examine: The unique properties of praseodymium-doped hafnia films, their … Read more